Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications
نویسندگان
چکیده
The direct integrating of GaAs and diamond is achieved at room temperature via a surface activated bonding method. An ultrathin crystal defect layer composed was formed the interface. thickness layers determined to be 0.4 1.6 nm, respectively. After annealing 400 °C, no changes were observed in interfacial structure. thermal characterization transmission line model (TLM) patterns on bonded sapphire substrates demonstrated. resistance TLM 6 34.9 K/W, showed an excellent heat dissipation property due high conductivity diamond.
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ژورنال
عنوان ژورنال: Diamond and Related Materials
سال: 2021
ISSN: ['1879-0062', '0925-9635']
DOI: https://doi.org/10.1016/j.diamond.2020.108207